The product process was gradually introduced into SGT

issuing time ：2022-09-29 abstract ：QYnano

SGT MOSFET device scheme

A. Optimized protocell structure with the lowest epitaxial resistivity to obtain very low Rsp;

B. Adopt the self-alignment process design technology and the upper and lower structure of the primitive cell to obtain a high density of 645M/ INCH2, so as to obtain a very low Rsp;

C. Adopt advanced DFN package for better heat dissipation performance and on-resistance

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The product process was gradually introduced into SGT

For future chips, IBM shows new ambitions

The product process was gradually introduced into SGT

The semiconductor sector oscillated and strengthened

In 2017, the company was rated as the leading MOSFET enterprise in China

Set up 100,000 level dust-free workshop

The semiconductor plate oscillates stronger