FNK10N02-A

产品介绍1：

● VDS = 20V,ID =150A

RDS(ON) <2.25mΩ @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

● Good stability and uniformity with high EAS

● Special process technology for high ESD capability