FNK10N02C

产品介绍1：

● VDS =20V,ID =100A

RDS(ON) <3.3m Ω @ VGS=10V (Typ2.5mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

● Good stability and uniformity with high EAS

● Special process technology for high ESD capability